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数量 | 价钱 (含税) |
---|---|
1+ | CNY33.380 (CNY37.7194) |
10+ | CNY23.430 (CNY26.4759) |
25+ | CNY22.300 (CNY25.199) |
100+ | CNY21.160 (CNY23.9108) |
300+ | CNY19.920 (CNY22.5096) |
500+ | CNY19.150 (CNY21.6395) |
2500+ | CNY18.380 (CNY20.7694) |
产品概述
Single-channel isolated gate driver with ultra-high common-mode transient immunity (CMTI) of 300KV/μs (typ). The devices is designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications with different output gate-drive circuitry and B-side supply voltages. It features variants with output options for gate driver common pin GNDB. Devices has integrated digital galvanic isolation using Maxim’s proprietary process technology. Also features isolation for a withstand voltage rating of 3KVRMS (narrow SOIC package) for 60 seconds. It supports a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The MAX22700 has a maximum RDSON of 1.25ohm for the low-side driver. It has a maximum RDSON of 4.5ohm for the high side driver. Applications include isolated gate driver for inverters, motor drives, UPS and PV Inverters.
- High CMTI (300KV/μs, typ)
- Robust galvanic isolation
- Withstands ±5KV surge between GNDA and VSSB with 1.2/50μs waveform
- Precision UVLO
- Single ended input
注释
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
技术规格
1放大器
高压侧和低压侧
8引脚
表面安装
-
3V
-40°C
35ns
-
MSL 3 - 168小时
隔离式
GaN HEMT, SiC MOSFET
NSOIC
反相, 非反相
-
5.5V
125°C
35ns
-
No SVHC (21-Jan-2025)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书