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产品概述
The MMBZ15VDLT1G is a dual monolithic silicon Zener Diode designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as printers, business machines and other applications. Their dual junction common cathode design protects two separate lines using only one package. This device is ideal for situations where board space is at a premium.
- SOT-23 Package allows either two separate unidirectional or single bidirectional configurations
- 12.8V, 22V Working peak reverse voltage range
- 40W at 1.0ms Peak power (bidirectional)
- ESD rating of Class 3 (<gt/>16kV) per human body model
- <lt/>100nA Low leakage
- UL94 V-0 Flammability rating
- AEC-Q101 qualified and PPAP capable
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
产品范围
MMBZ1
TVS极性
单向
反向关断电压
12.8V
二极管封装类型
SOT-23
最小击穿电压
14.3V
峰值脉冲功率耗散
40W
二极管安装
表面安装
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
额定齐纳电压
15V
功率耗散
225mW
最大钳位电压
21.2V
针脚数
3引脚
最大击穿电压
15.8V
工作温度最高值
150°C
合规
AEC-Q101
MMBZ15VDLT1G 的替代之选
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量(千克):.00003