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168 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY40.030 (CNY45.2339) |
10+ | CNY37.240 (CNY42.0812) |
25+ | CNY36.120 (CNY40.8156) |
50+ | CNY35.270 (CNY39.8551) |
100+ | CNY34.420 (CNY38.8946) |
250+ | CNY33.310 (CNY37.6403) |
500+ | CNY32.490 (CNY36.7137) |
包装规格:每个
最低: 1
多件: 1
CNY40.03 (CNY45.23 含税)
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产品概述
MT46V64M8P-5B:J is a double data rate (DDR) SDRAM. It uses a double data rate architecture to achieve high-speed operation. This double data rate architecture is essentially for 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the memory consists of a single 2n-bit-wide, one-clock cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. It has an internal, pipelined double-data-rate (DDR) architecture with two data accesses per clock cycle.
- Operating voltage range is 2.5V to 2.7V
- 64Meg x 8 configuration
- Packaging style is 400-mil TSOP
- Timing (cycle time) is 5ns at CL = 3 (DDR400)
- Operating temperature range is 0°C to +70°C
- Clock rate is 200MHz, ᵗRAS lockout supported (ᵗRAP = ᵗRCD)
- Differential clock inputs (CK and CK#), four internal banks for concurrent operation
- Commands entered on each positive CK edge, concurrent auto precharge option is supported
- DQS edge-aligned with data for READs, centeraligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK, auto refresh 64ms, 8192-cycle
技术规格
DRAM类型
DDR
记忆配置
64M x 8位
IC 外壳 / 封装
TSOP
额定电源电压
2.6V
工作温度最小值
0°C
产品范围
-
存储密度
512Mbit
时钟频率最大值
200MHz
针脚数
66引脚
芯片安装
表面安装
工作温度最高值
70°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423231
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001