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数量 | 价钱 (含税) |
---|---|
1+ | CNY238.950 (CNY270.0135) |
10+ | CNY210.530 (CNY237.8989) |
25+ | CNY176.410 (CNY199.3433) |
50+ | CNY159.340 (CNY180.0542) |
100+ | CNY150.820 (CNY170.4266) |
产品信息
产品概述
The CY62167DV30LL-55ZXI is a 16Mb high-performance CMOS static RAM organized as 1M words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected. The input/output pins are placed in a high-impedance state when deselected, outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. Writing to the device is accomplished by taking chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
技术规格
异步SRAM
1M x 16bit
48引脚
3.6V
-
-40°C
-
No SVHC (17-Jan-2023)
16Mbit
TSOP
2.2V
3V
表面安装
85°C
0
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书