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产品信息
制造商DIODES INC.
制造商产品编号BSS8402DW-7-F
库存编号1713834
技术数据表
通道类型互补N与P沟道
漏源电压Vds N沟道60V
漏源电压Vds P沟道60V
连续漏极电流 Id N沟道115mA
连续漏极电流 Id P沟道130mA
漏源通态电阻N沟道13.5ohm
漏源导通电阻P沟道10ohm
晶体管封装类型SOT-363
针脚数6引脚
耗散功率N沟道200mW
耗散功率P沟道200mW
工作温度最高值150°C
产品范围-
合规-
MSLMSL 1 -无限制
SVHC(高度关注物质)No SVHC (27-Jun-2024)
产品概述
BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, complementary pair
- Drain source voltage is 60V at TA = +25°C, P/N channel
- Continuous drain current is 115mA at TA = +25°C, P/N channel
- Drain source on state resistance is 13.5ohm at TA = +25°C, P/N channel
- Power dissipation is 200mW at TA = +25°C, P/N channel
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
技术规格
通道类型
互补N与P沟道
漏源电压Vds P沟道
60V
连续漏极电流 Id P沟道
130mA
漏源导通电阻P沟道
10ohm
针脚数
6引脚
耗散功率P沟道
200mW
产品范围
-
MSL
MSL 1 -无限制
漏源电压Vds N沟道
60V
连续漏极电流 Id N沟道
115mA
漏源通态电阻N沟道
13.5ohm
晶体管封装类型
SOT-363
耗散功率N沟道
200mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (27-Jun-2024)
BSS8402DW-7-F 的替代之选
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量(千克):.000006