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数量 | 价钱 (含税) |
---|---|
5+ | CNY3.080 (CNY3.4804) |
10+ | CNY2.030 (CNY2.2939) |
100+ | CNY1.560 (CNY1.7628) |
500+ | CNY1.540 (CNY1.7402) |
1000+ | CNY1.520 (CNY1.7176) |
5000+ | CNY1.500 (CNY1.695) |
10000+ | CNY1.490 (CNY1.6837) |
产品信息
产品概述
The ZXGD3005E6TA is a high-speed non-inverting single Gate Driver capable of driving up to 10A into a MOSFET or IGBT gate capacitive load from supply voltages up to 25V. With propagation delay times down to <lt/>20ns. This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It is ideally suited to act as a voltage buffer between the typically high output impedances of a controller IC and the effectively low impedance on the gate of a power MOSFET during switching. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs. It has separate source and sink outputs that enables the turn-on and turn-off times of the MOSFET to be independently controlled. This has been designed to be inherently rugged to latch-up and shoot-through issues. The optimized pin-out SOT26 package eases board layout, enabling reduced parasitic inductance of traces.
- Emitter-follower configuration for ultra-fast switching
- Non-inverting voltage buffer stage
- Low input current of 1mA to deliver 4A output current
- Separate source and sink outputs for independent control of rise and fall time
- Optimized pin-out to ease board layout and minimize parasitic inductance of traces
- Rugged design that avoids latch-up or shoot-through issues
- Near - zero quiescent supply current
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
1放大器
-
6引脚
表面安装
10A
-
-55°C
20ns
-
-
-
IGBT, MOSFET
SOT-26
非反向
10A
-
150°C
20ns
-
No SVHC (27-Jun-2024)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书