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产品概述
The FDT3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 14nC Typical low gate charge
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
通道类型
N通道
电流, Id 连续
3.7A
晶体管封装类型
SOT-223
Rds(on)测试电压
10V
功率耗散
3W
工作温度最高值
150°C
合规
-
漏源电压, Vds
100V
漏源接通状态电阻
0.12ohm
晶体管安装
表面安装
阈值栅源电压最大值
2.5V
针脚数
3引脚
产品范围
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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重量(千克):.00044