产品概述
The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
18.5A
TO-3P
10V
300W
150°C
-
Lead (08-Jul-2021)
600V
0.38ohm
通孔
5V
3引脚
-
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书