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FQB22P10TM
功率场效应管, MOSFET, P通道, 100 V, 22 A, 0.125 ohm, TO-263 (D2PAK), 表面安装
产品概述
The FQB22P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 40nC typical low gate charge
- 160pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
P通道
电流, Id 连续
22A
晶体管封装类型
TO-263 (D2PAK)
Rds(on)测试电压
10V
功率耗散
3.75W
工作温度最高值
175°C
合规
-
漏源电压, Vds
100V
漏源接通状态电阻
0.125ohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
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重量（千克）：.001