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ONSEMI RFD14N05LSM9A
功率场效应管, MOSFET, N通道, 50 V, 14 A, 0.1 ohm, TO-252AA, 表面安装
- 制造商：
- ONSEMI ONSEMI
- 制造商产品编号:
- RFD14N05LSM9A
- 库存编号
- 2454075
-
- 技术数据表:
- RFD14N05LSM9A 数据表
- ECAD / MCAD
-
产品概述
The RFD14N05LSM9A is a N-channel logic level Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3 to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
- Temperature compensating PSPICE® model
- Can be driven directly from CMOS, NMOS and TTL circuits
- Peak current vs. pulse width curve
- UIS Rating curve
应用
电源管理, 电机驱动与控制, 工业
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
技术文档 (3)
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您现在可以预订货品了 订购所需的数量并按正常方式结算。目前无法交付的数量将列入延期交货订单中，并在到货后立即发货。
交付周期内有额外库存， 交付周期大约为 24-4-15
105 英国 有库存，可在 5-6 个工作日内发货
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| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|---|---|
| 1+ | CNY5.60 CNY6.328 | ( ) |
| 10+ | CNY5.00 CNY5.65 | ( ) |
| 100+ | CNY3.42 CNY3.8646 | ( ) |
| 500+ | CNY2.85 CNY3.2205 | ( ) |
| 1000+ | CNY2.43 CNY2.7459 | ( ) |
| 2500+ | CNY2.20 CNY2.486 | ( ) |
| 5000+ | CNY2.16 CNY2.4408 | ( ) |
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|
定价不可用。 请联系客户服务。
1 (切割卷带 2454075) x 5.6 = CNY5.60
1 (切割卷带 2454075) x 6.328 = CNY6.328
总价: CNY5.60
( 不含税 )
总价: CNY6.33
( 含税 )
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