7,500 您现在可以预订货品了
数量 | 价钱 (含税) |
---|---|
5+ | CNY6.880 (CNY7.7744) |
10+ | CNY4.800 (CNY5.424) |
100+ | CNY3.330 (CNY3.7629) |
500+ | CNY2.480 (CNY2.8024) |
2500+ | CNY2.080 (CNY2.3504) |
7500+ | CNY2.070 (CNY2.3391) |
20000+ | CNY2.060 (CNY2.3278) |
37500+ | CNY2.040 (CNY2.3052) |
产品信息
产品概述
The RFD14N05LSM9A is a N-channel logic level Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3 to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
- Temperature compensating PSPICE® model
- Can be driven directly from CMOS, NMOS and TTL circuits
- Peak current vs. pulse width curve
- UIS Rating curve
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
14A
TO-252AA
5V
48W
175°C
-
50V
0.1ohm
表面安装
2V
3引脚
-
Lead (27-Jun-2024)
RFD14N05LSM9A 的替代之选
找到 3 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书