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数量 | 价钱 (含税) |
---|---|
1+ | CNY10.050 (CNY11.3565) |
10+ | CNY6.700 (CNY7.571) |
100+ | CNY4.890 (CNY5.5257) |
500+ | CNY4.290 (CNY4.8477) |
1000+ | CNY3.920 (CNY4.4296) |
5000+ | CNY3.280 (CNY3.7064) |
产品信息
产品概述
The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
- UIS SOA rating curve (single pulse)
- Can be driven directly from CMOS, NMOS and TTL circuits
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedance
- Majority carrier device
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
16A
TO-252AA
5V
60W
150°C
-
50V
0.047ohm
表面安装
2V
3引脚
-
Lead (27-Jun-2024)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:China
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RoHS
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