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ONSEMI RFD16N05LSM9A
功率场效应管, MOSFET, N通道, 50 V, 16 A, 0.047 ohm, TO-252AA, 表面安装
- 制造商：
- ONSEMI ONSEMI
- 制造商产品编号:
- RFD16N05LSM9A
- 库存编号
- 2454077
- 技术数据表:
- RFD16N05LSM9A 数据表
- ECAD / MCAD
-
产品概述
The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
- UIS SOA rating curve (single pulse)
- Can be driven directly from CMOS, NMOS and TTL circuits
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedance
- Majority carrier device
应用
电源管理, 电机驱动与控制, 工业
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
技术文档 (3)
可延期交货
×
将于 23-12-24 再提供 250 件
21
您现在可以预订货品了 订购所需的数量并按正常方式结算。目前无法交付的数量将列入延期交货订单中，并在到货后立即发货。
由于市场条件的影响，交货时间仅供一般指导，可能会在短时间内发生变化
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| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|---|---|
| 1+ | CNY7.71 CNY8.7123 | ( ) |
| 10+ | CNY6.29 CNY7.1077 | ( ) |
| 100+ | CNY4.90 CNY5.537 | ( ) |
| 500+ | CNY4.15 CNY4.6895 | ( ) |
| 1000+ | CNY3.39 CNY3.8307 | ( ) |
| 2500+ | CNY3.30 CNY3.729 | ( ) |
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|
定价不可用。 请联系客户服务。
1 (切割卷带 2454077) x 7.71 = CNY7.71
1 (切割卷带 2454077) x 8.7123 = CNY8.7123
总价: CNY7.71
( 不含税 )
总价: CNY8.71
( 含税 )
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