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数量 | 价钱 (含税) |
---|---|
1+ | CNY11.730 (CNY13.2549) |
10+ | CNY7.780 (CNY8.7914) |
50+ | CNY7.350 (CNY8.3055) |
100+ | CNY6.910 (CNY7.8083) |
250+ | CNY6.500 (CNY7.345) |
500+ | CNY6.250 (CNY7.0625) |
1000+ | CNY6.100 (CNY6.893) |
2500+ | CNY5.940 (CNY6.7122) |
产品信息
产品概述
1ED3142MU12FXUMA1 is a galvanically isolated single-channel 3KV (rms) isolated gate driver IC with separate outputs for use with 600V/650V/1200V/1700V/2300V IGBTs, Si and SiC MOSFETs in DSO-8 150 mil package. The input logic pins operate on a wide input voltage range from 3V to 6.5V using CMOS threshold levels to support 3.3V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. Typical applications include EV charging, energy storage systems, solar inverters, server and telecom switched mode power supplies (SMPS), UPS-systems, AC and brushless DC motor drives, Commercial air-conditioning (CAC), high voltage DC-DC converter and DC-AC inverter.
- 12.5V/13.6V typical (Vuvlol2/Vuvloh22)
- 6A/6.5A typical output current source/sink
- UL 1577 certification
- 45ns propagation delay with 7ns part-to-part matching (skew)
- 35V absolute maximum output supply voltage
- High common-mode transient immunity CMTI <gt/> 300KV/µs
- Separate source and sink outputs with active shutdown and short circuit clamping
- Galvanically isolated coreless transformer gate driver
- Suitable for operation at high ambient temperature and in fast switching applications
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
技术规格
1放大器
高压侧
8引脚
表面安装
6A
3V
-40°C
45ns
-
No SVHC (21-Jan-2025)
隔离式
IGBT, Si和SiC MOSFET
DSO
CMOS
6.5A
17V
125°C
45ns
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书