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数量 | 价钱 (含税) |
---|---|
1+ | CNY11.250 (CNY12.7125) |
10+ | CNY7.500 (CNY8.475) |
50+ | CNY7.060 (CNY7.9778) |
100+ | CNY6.620 (CNY7.4806) |
250+ | CNY6.230 (CNY7.0399) |
500+ | CNY5.990 (CNY6.7687) |
1000+ | CNY5.790 (CNY6.5427) |
2500+ | CNY5.580 (CNY6.3054) |
产品信息
产品概述
2EP100RXTMA1 is an EiceDRIVER™ power full-bridge transformer driver for IGBT and SiC MOSFET gate driver supply. It is a open loop full-bridge transformer driver for designing isolated gate driver supplies for a wide variety of switch technologies (IGBTs, SiC MOSFETs, GaN HEMTs, and others). It is optimized to supply gate drivers for a variety of switches such as TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs together with EiceDRIVER™ gate driver ICs, and other similar products. Potential applications include Industrial motor drives - compact, standard, premium, servo drives, solar inverters, UPS and energy storage systems, welding, commercial air-conditioning, high-voltage DC-DC converters and DC-AC inverters, isolated switch-mode power supplies, power meters.
- Wide input supply range: from 4.5V to 20V
- Supports up to 5W output power supplies
- Wide frequency range: from 65kHz to 103kHz with an internal oscillator or external clock
- Adjustable overcurrent threshold, short circuit protection for power outputs
- Overtemperature protection, ready output to indicate normal operation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Rise time is 15ns typical at VVDD = 15V, CLOAD = 1nF, VOUT from 10% to 90%
- Fall time is 15ns typical at VVDD = 15V, CLOAD = 1nF, VOUT from 90% to 10%
- PG-TSSOP-8-1 package
- Operating ambient temperature range from -40 to 125°C
技术规格
2放大器
全桥
8引脚
表面安装
-
4.5V
-40°C
280ns
-
No SVHC (21-Jan-2025)
隔离式
GaN HEMT, IGBT, SiC MOSFET
TSSOP
逻辑器件
10mA
20V
125°C
280ns
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
产品合规证书