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数量 | 价钱 (含税) |
---|---|
1+ | CNY35.170 (CNY39.7421) |
10+ | CNY23.450 (CNY26.4985) |
25+ | CNY21.810 (CNY24.6453) |
50+ | CNY20.510 (CNY23.1763) |
100+ | CNY19.200 (CNY21.696) |
250+ | CNY18.150 (CNY20.5095) |
500+ | CNY16.280 (CNY18.3964) |
1000+ | CNY13.670 (CNY15.4471) |
产品概述
6EDL04N065PTXUMA1 is a 650V three-phase gate driver with over current protection (OCP), enable (EN), fault and integrated bootstrap diode (BSD). It is a full bridge driver to control power devices like MOS-transistors in 3-phase systems with a maximum blocking voltage of +650V. Based on the used SOI-technology, there is excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The device includes an under-voltage detection unit with a hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Potential applications include home appliances, refrigeration compressors, air-conditioning, fans, pumps, motor drives, general-purpose inverters, power tools, and light electric vehicles.
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Separate control circuits for all six drivers, detection of over current and under voltage supply
- Externally programmable delay for fault clear after over current detection
- Signal interlocking of every phase to prevent cross conduction
- 9V/8.1V typical UVLO thresholds
- Input bias current (ITRIP=high) is 45µA typ at VITRIP=3.3 V
- Turn-on propagation delay is 490ns typ at VLIN/HIN = 0 or 3.3V
- PG-DSO-28 package
- Ambient temperature range from -40 to 105°C
技术规格
6放大器
3 相全桥
28引脚
表面安装
165mA
10V
-40°C
490ns
-
No SVHC (21-Jan-2025)
隔离式
MOSFET
SOIC
CMOS,LSTTL
-375mA
17.5V
105°C
530ns
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Indonesia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书