BSZ050N03LSGATMA1

The BSZ050N03LS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.

• Easy to design in
• Increased battery lifetime
• Improved EMI behaviour making external snubber networks obsolete
• Saving space
• Reducing power losses
• Optimized technology for DC-to-DC converters
• Qualified according to JEDEC for target applications
• Logic level
• Excellent gate charge x RDS (ON) product (FOM)
• Very low ON-resistance RDS (ON)
• Superior thermal resistance
• Avalanche rated
• Halogen-free, Green device

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.