BTS3410GXUMA1

BTS3410GXUMA1 is a N-channel vertical power FET in Smart SIPMOS technology. It is fully protected by embedded protection functions. Applications include all kinds of resistive, inductive and capacitive loads in switching or linear applications, µC compatible power switch for 12VDC applications, replaces electromechanical relays and discrete circuits.

• Logic level input, input protection (ESD)
• Thermal shutdown with auto restart, overload protection
• Short circuit protection, overvoltage protection
• Current limitation, analog driving possible
• 42 to 55V drain source clamp voltage at (Tj = -40 to +150°C, ID = 10mA)
• 1.5µA typical off-state drain current at (Tj = -40°C to +150°C, VDS = 32V, VIN = 0V)
• 10µA typical on state input current at (Tj = 25°C)
• 190mohm typical on-state resistance at (VIN = 5V, ID = 1.4A, Tj = 25°C)
• 7.5A typical current limit at (VIN = 10V, VDS = 12V, tm = 200µs), AEC-Q100 qualified
• Operating temperature range from -40°C to +105°C, PG-DSO8-25 package