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数量 | 价钱 (含税) |
---|---|
1+ | CNY107.660 (CNY121.6558) |
10+ | CNY99.680 (CNY112.6384) |
25+ | CNY95.120 (CNY107.4856) |
50+ | CNY93.770 (CNY105.9601) |
100+ | CNY88.920 (CNY100.4796) |
产品信息
产品概述
The CY62167EV30LL-45BVXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Ultra-low active power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
异步SRAM
1M x 16bit
48引脚
3.6V
-
-40°C
-
No SVHC (27-Jun-2018)
16Mbit
FBGA
2.2V
3V
表面安装
85°C
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书