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IGLR70R200D2SXUMA1
氮化镓 (GaN)晶体管, 700 V, 9.3 A, 0.24 ohm, 1.26 nC, TSON, 表面安装
205 有货
5,000 您现在可以预订货品了
205 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY17.890 (CNY20.2157) |
| 10+ | CNY11.520 (CNY13.0176) |
| 100+ | CNY8.030 (CNY9.0739) |
| 500+ | CNY6.700 (CNY7.571) |
| 1000+ | CNY6.220 (CNY7.0286) |
| 5000+ | CNY5.910 (CNY6.6783) |
包装规格：单件（切割供应）
最低: 1
多件: 1
CNY17.89 (CNY20.22 含税)
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产品概述
IGLR70R200D2SXUMA1 is a CoolGaN™ G5 highly efficient gallium nitride (GaN) transistor designed for power conversion at 700V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200mm (8-inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. It is ideal for consumer applications like chargers, adapters, TV power, and home appliances.
- Qualified according to JEDEC standard, 2kV HBM ESD standards
- Enhancement mode transistor, ultra‑fast switching, no reverse‑recovery charge
- Capable of reverse conduction, low gate and output charge, superior commutation ruggedness
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability
- Ensures robust performance under challenging conditions
- Drain‑source on‑state resistance is 0.2ohm typ at IG =7.1mA; ID =2.1A; Tj =25°C
- PG‑TSON‑8 package
- Operating junction temperature range from ‑40 to 150°C
技术规格
漏源电压, Vds
700V
漏源接通状态电阻
0.24ohm
晶体管封装类型
TSON
针脚数
8引脚
合规
-
电流, Id 连续
9.3A
栅极电荷(典型值)
1.26nC
晶体管安装
表面安装
产品范围
CoolGaN G5 Series
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量（千克）：.000001