打印页面
IGP50N60TXKSA1
IGBT, 50 A, 2 V, 333 W, 600 V, TO-220, 3 引脚
图片仅用于图解说明，详见产品说明。
515 有货
需要更多？
515 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY31.230 (CNY35.2899) |
| 10+ | CNY20.490 (CNY23.1537) |
| 100+ | CNY15.700 (CNY17.741) |
| 500+ | CNY14.690 (CNY16.5997) |
| 1000+ | CNY13.680 (CNY15.4584) |
包装规格：每个
最低: 1
多件: 1
CNY31.23 (CNY35.29 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
该代码将添加到订单确认、发票、发货通知、订单确认电子邮件和产品标签中。
产品概述
The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
- ±20V Gate to emitter voltage (VGE)
- 0.45K/W IGBT thermal resistance, junction to case
- 40K/W IGBT thermal resistance, junction - ambient
技术规格
连续集电极电流
50A
功率耗散
333W
晶体管封装类型
TO-220
工作温度最高值
175°C
产品范围
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
集电极-发射极饱和电压
2V
最大集电极发射电压
600V
针脚数
3引脚
晶体管安装
通孔
湿气敏感性等级
-
相关产品
找到 2 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下载产品合规证书
产品合规证书
重量（千克）：.00195