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IGW50N60H3FKSA1
IGBT, 50 A, 2.3 V, 333 W, 600 V, TO-247, 3 引脚
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209 有货
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209 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY34.950 (CNY39.4935) |
| 10+ | CNY19.500 (CNY22.035) |
| 100+ | CNY18.710 (CNY21.1423) |
| 500+ | CNY17.930 (CNY20.2609) |
| 1000+ | CNY17.130 (CNY19.3569) |
包装规格：每个
最低: 1
多件: 1
CNY34.95 (CNY39.49 含税)
品項附註
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产品概述
The IGW50N60H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
技术规格
连续集电极电流
50A
功率耗散
333W
晶体管封装类型
TO-247
工作温度最高值
175°C
产品范围
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
集电极-发射极饱和电压
2.3V
最大集电极发射电压
600V
针脚数
3引脚
晶体管安装
通孔
湿气敏感性等级
-
相关产品
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量（千克）：.00542