打印页面
IPA60R190P6XKSA1
功率场效应管, MOSFET, N通道, 600 V, 20.2 A, 0.171 ohm, TO-220FP, 通孔
图片仅用于图解说明，详见产品说明。
707 有货
需要更多？
707 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY23.900 (CNY27.007) |
| 10+ | CNY15.610 (CNY17.6393) |
| 100+ | CNY11.960 (CNY13.5148) |
| 500+ | CNY9.940 (CNY11.2322) |
| 1000+ | CNY8.520 (CNY9.6276) |
包装规格：每个
最低: 1
多件: 1
CNY23.90 (CNY27.01 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The IPA60R190P6 is a N-channel power MOSFET with 650VDS drain source voltage. Infineon's CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease of use.
- Reduced gate charge (Qg)
- Higher V th
- Good body diode ruggedness
- Optimized integrated Rg
- Improved dV/dt from 50V/ns
- CoolMOS™ quality with over 12 years manufacturing experience in Superjunction technology
- Increased MOSFET dV/dt ruggedness
- Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Improved efficiency especially in light load condition
- Better efficiency in soft switching applications due to earlier turn-OFF
技术规格
通道类型
N通道
电流, Id 连续
20.2A
晶体管封装类型
TO-220FP
Rds(on)测试电压
10V
功率耗散
34W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
600V
漏源接通状态电阻
0.171ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
相关产品
找到 6 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下载产品合规证书
产品合规证书
重量（千克）：.000006