IPD65R225C7ATMA1

The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

• Increased dV/dt ruggedness
• Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
• Best in class RDS (ON)
• Easy to use/drive
• Halogen-free
• Enabling higher system efficiency
• Enabling higher frequency
• Increased power density solutions
• Size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures
• Reduced energy stored in output capacitance(Eoss)
• Low switching losses
• Outstanding CoolMOS™ quality

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

注释

MOSFET平联运作, 通常建议使用铁氧体磁珠门或单独的图腾柱.