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IPP60R099CPXKSA1
功率场效应管, MOSFET, N通道, 650 V, 31 A, 0.099 ohm, TO-220, 通孔
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86 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY50.850 (CNY57.4605) |
| 10+ | CNY35.690 (CNY40.3297) |
| 100+ | CNY29.730 (CNY33.5949) |
| 500+ | CNY26.740 (CNY30.2162) |
| 1000+ | CNY26.210 (CNY29.6173) |
包装规格：每个
最低: 1
多件: 1
CNY50.85 (CNY57.46 含税)
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产品概述
The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Lowest Figure of Merit R on x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- Very fast switching
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
31A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
255W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
650V
漏源接通状态电阻
0.099ohm
晶体管安装
通孔
阈值栅源电压最大值
3V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
技术文档 (1)
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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重量（千克）：.00195