IPP60R190P6XKSA1

The IPP60R190P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Very high commutation ruggedness
• Easy to use
• Increased dV/dt ruggedness
• Halogen-free, Green device
• Qualified according to JEDEC for target applications
• Higher Vth
• Optimized integrated Rg
• Improved efficiency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-OFF
• Suitable for hard and soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behaviour
• High robustness and better efficiency
• Outstanding quality and reliability

警告

该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.

注释

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.