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数量 | 价钱 (含税) |
---|---|
1+ | CNY22.560 (CNY25.4928) |
10+ | CNY16.680 (CNY18.8484) |
25+ | CNY15.360 (CNY17.3568) |
50+ | CNY14.630 (CNY16.5319) |
100+ | CNY13.890 (CNY15.6957) |
250+ | CNY12.640 (CNY14.2832) |
500+ | CNY12.300 (CNY13.899) |
1000+ | CNY11.950 (CNY13.5035) |
产品信息
产品概述
The IR2110STRPBF is a high speed power MOSFET/IGBT Driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- dV/dt immune
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
技术规格
2放大器
高压侧和低压侧
16引脚
表面安装
2A
10V
-40°C
120ns
-
MSL 3 - 168小时
-
IGBT, MOSFET
SOIC
非反向
2A
20V
125°C
94ns
-
No SVHC (21-Jan-2025)
IR2110STRPBF 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书