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数量 | 价钱 (含税) |
---|---|
1+ | CNY22.560 (CNY25.4928) |
10+ | CNY16.900 (CNY19.097) |
25+ | CNY15.510 (CNY17.5263) |
50+ | CNY14.730 (CNY16.6449) |
100+ | CNY13.960 (CNY15.7748) |
250+ | CNY13.220 (CNY14.9386) |
500+ | CNY12.790 (CNY14.4527) |
1000+ | CNY12.280 (CNY13.8764) |
产品信息
产品概述
The IR2113STRPBF is a high voltage high speed power MOSFET and IGBT high and low-side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
技术规格
2放大器
高压侧和低压侧
16引脚
表面安装
2A
10V
-40°C
120ns
-
MSL 3 - 168小时
-
IGBT, MOSFET
SOIC
非反向
2A
20V
125°C
94ns
-
No SVHC (21-Jan-2025)
IR2113STRPBF 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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