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数量 | 价钱 (含税) |
---|---|
1+ | CNY15.220 (CNY17.1986) |
10+ | CNY13.100 (CNY14.803) |
50+ | CNY12.510 (CNY14.1363) |
100+ | CNY11.910 (CNY13.4583) |
250+ | CNY11.310 (CNY12.7803) |
500+ | CNY10.320 (CNY11.6616) |
1000+ | CNY9.470 (CNY10.7011) |
产品信息
产品概述
The IR2127SPBF is a single-channel current sensing high voltage high speed power MOSFET and IGBT Driver with the proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuitry detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Input logic compatible
- FAULT\ lead indicates shutdown has occurred
- Output in phase with input
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
1放大器
高压侧
8引脚
表面安装
250mA
10V
-40°C
200ns
-
MSL 2 - 1年
-
MOSFET
SOIC
非反向
500mA
20V
125°C
150ns
-
No SVHC (21-Jan-2025)
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进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
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