IRF1104PBF

IRF1104PBF is a HEXFET® Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• Dynamic dv/dt rating
• Fast switching, fully avalanche rated
• Drain-to-source breakdown voltage is 40V (max, VGS = 0V, ID = 250µA)
• Breakdown voltage temp coefficient is 0.038V/°C (typ, 25°C, ID = 1mA)
• Gate threshold voltage range from 2.0 to 4.0V (VDS = VGS, ID = 250µA)
• Forward transconductance is 37S (max, VDS = 25V, ID = 60A)
• Drain-to-source leakage current is 25µA (typ, VDS = 40V, VGS = 0V)
• Total gate charge is 93nC (max, ID = 60A, TJ = 25°C)
• Turn-on delay time is 15ns (typ, VDD = 20V, TJ = 25°C)
• TO-220 package, operating and storage temperature range from -55 to +175°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.