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IRF520NSTRLPBF 的替代之选
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产品概述
Single N-channel IR power MOSFET. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- High-current rating and high current carrying capability
- Increased ruggedness
- Industry standard qualification level
- Standard pinout allows for drop in replacement
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
9.7A
晶体管封装类型
TO-263AB
Rds(on)测试电压
10V
功率耗散
48W
工作温度最高值
175°C
合规
-
漏源电压, Vds
100V
漏源接通状态电阻
0.2ohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
HEXFET
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.001