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数量 | 价钱 (含税) |
---|---|
1+ | CNY6.040 (CNY6.8252) |
10+ | CNY5.290 (CNY5.9777) |
100+ | CNY4.380 (CNY4.9494) |
500+ | CNY3.930 (CNY4.4409) |
1000+ | CNY3.630 (CNY4.1019) |
5000+ | CNY3.380 (CNY3.8194) |
产品概述
The IRF7404TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- Generation V technology
- Dynamic dV/dt rating
- Fast switching
- Low static drain-to-source ON-resistance
- Fully avalanche rating
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
P通道
6.7A
SOIC
4.5V
2.5W
150°C
-
No SVHC (23-Jan-2024)
20V
0.04ohm
表面安装
700mV
8引脚
-
MSL 1 -无限制
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进行最后一道重要生产流程所在的地区原产地:China
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RoHS
RoHS
产品合规证书