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产品概述
The IRGP4066DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
- Low VCE (ON) Trench IGBT technology
- Low switching losses
- Square RBSOA
- 100% of Parts tested for ILM
- Positive VCE (ON) temperature coefficient
- Tight parameter distribution
- High efficiency in a wide range of applications
- 5µs Short-circuit SOA
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
连续集电极电流
140A
功率耗散
454W
晶体管封装类型
TO-247AC
工作温度最高值
175°C
产品范围
-
集电极-发射极饱和电压
2.1V
最大集电极发射电压
600V
针脚数
3引脚
晶体管安装
通孔
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Mexico
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Mexico
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.007458