IRL7486MTRPBF

IRL7486MTRPBF is a N channel power MOSFET. Application includes brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.

• Optimized for logic level drive
• Improved gate, avalanche and dynamic dv/dt ruggedness
• Fully characterized capacitance and avalanche SOA
• Enhanced body diode dv/dt and di/dt capability
• Drain-to-source breakdown voltage is 40V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
• Static drain-to-source on-resistance is 1.0mohm (typ, VGS = 10V, ID = 123A, TJ = 25°C)
• Continuous drain current, VGS at 10V (silicon limited) is 209A (max, TC = 25°C)
• Internal gate resistance is 0.97ohm (typ, TJ = 25°C)
• Forward transconductance is 427S (TJ = 25°C, VDS = 10V, ID = 123A, typ)
• DirectFET® ME package, operating junction and storage temperature range from -55 to +150°C

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