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IRLML2402TRPBF
功率场效应管, MOSFET, N通道, 20 V, 1.2 A, 0.25 ohm, SOT-23, 表面安装
28,821 有货
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13430 件可于下一个工作日送达(Shanghai 库存)
15391 件可于 5-6 个工作日内送达(英国 库存)
该库存量售罄后，将不再备货
| 数量 | 价钱 (含税) |
|---|---|
| 50+ | CNY1.530 (CNY1.7289) |
| 250+ | CNY1.170 (CNY1.3221) |
| 1000+ | CNY0.832 (CNY0.9402) |
| 3000+ | CNY0.709 (CNY0.8012) |
包装规格：单件（切割供应）
最低: 100
多件: 1
CNY153.00 (CNY172.89 含税)
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IRLML2402TRPBF 的替代之选
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产品概述
IRLML2402TRPBF is a HEXFET® power MOSFET. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Typical applications include roof control module, automotive head unit, EV charging, telecommunications infrastructure.
- Planar cell structure for wide SOA, industry standard surface-mount package
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Increased ruggedness, industry standard qualification level
- High performance in low frequency applications, standard pinout allows for drop in replacement
- Drain to source breakdown voltage is 20V min at VGS=0V, ID=250µA
- Static drain to source on-resistance is 0.25ohm max at VGS=4.5V, ID=0.93A
- Micro3™ (SOT-23) package
- Junction and storage temperature range from -55 to +150°C
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
1.2A
晶体管封装类型
SOT-23
Rds(on)测试电压
4.5V
功率耗散
540mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
To Be Advised
漏源电压, Vds
20V
漏源接通状态电阻
0.25ohm
晶体管安装
表面安装
阈值栅源电压最大值
700mV
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：United States
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：United States
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:To Be Advised
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重量（千克）：.000033