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数量 | 价钱 (含税) |
---|---|
1+ | CNY66.550 (CNY75.2015) |
10+ | CNY49.870 (CNY56.3531) |
25+ | CNY47.610 (CNY53.7993) |
50+ | CNY45.480 (CNY51.3924) |
100+ | CNY43.390 (CNY49.0307) |
250+ | CNY41.310 (CNY46.6803) |
500+ | CNY38.740 (CNY43.7762) |
产品概述
The IRS23364DJPBF is a 3-phase high voltage high speed power MOSFET and IGBT Gate Driver IC with three high-side and three low-side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB size. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that a fault has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input.
- Integrated bootstrap functionality
- Over-current protection
- Over-temperature shutdown input
- Advanced input filter
- Integrated dead-time protection
- Shoot-through (cross-conduction) protection
- Under-voltage lockout for VCC and VBS
- Enable/disable input and fault reporting
- Adjustable fault clear timing
- Separate logic and power grounds
- 3.3V Input logic compatible
- Tolerant to negative transient voltage (dV/dt immune)
- Designed for use with bootstrap power supplies
- Matched propagation delays for all channels
应用
电机驱动与控制, 电源管理
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
-
IGBT, MOSFET
表面安装
-
高压侧和低压侧
塑料有引线芯片载体
非反向
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书