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数量 | 价钱 (含税) |
---|---|
1+ | CNY52.840 (CNY59.7092) |
10+ | CNY41.010 (CNY46.3413) |
25+ | CNY40.790 (CNY46.0927) |
50+ | CNY40.550 (CNY45.8215) |
100+ | CNY40.320 (CNY45.5616) |
250+ | CNY40.070 (CNY45.2791) |
500+ | CNY39.840 (CNY45.0192) |
产品概述
The IR2130SPBF is a high voltage/high speed power MOSFET and IGBT Driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or under-voltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- dV/dt Immune
- Gate drive supply range from 10 to 20V
- Under-voltage lockout for all channels
- Over-current shutdown turns off all six drivers
- Independent half-bridge drivers
- Matched propagation delay for all channels
- Outputs out of phase with inputs
- Cross-conduction prevention logic
- Fully operational to +600V
- 2.5V Logic compatible
技术规格
6放大器
3相桥
28引脚
表面安装
250mA
10V
-40°C
675ns
-
-
-
MOSFET
SOIC
反相
500mA
20V
125°C
425ns
-
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
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