打印页面
已停产
产品信息
制造商产品编号IXA60IF1200NA
库存编号1829727
技术数据表
IGBT配置单
连续集电极电流88A
连续集电极电流88A
集电极-发射极饱和电压2.1V
功率耗散290W
工作温度最高值150°C
针脚数4引脚
晶体管封装类型SOT-227B
IGBT端接螺丝
最大集电极发射电压1.2kV
IGBT技术-
晶体管安装面板
产品范围-
MSL-
SVHC(高度关注物质)No SVHC (17-Jan-2023)
产品概述
The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.
- Easy to parallel due to the positive temperature coefficient of the on-state voltage
- Reduced thermal resistance
- Low energy losses
- Fast switching
- Low tail current
- High power density
- Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
- Short circuit capability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
IGBT配置
单
连续集电极电流
88A
功率耗散
290W
针脚数
4引脚
IGBT端接
螺丝
IGBT技术
-
产品范围
-
SVHC(高度关注物质)
No SVHC (17-Jan-2023)
连续集电极电流
88A
集电极-发射极饱和电压
2.1V
工作温度最高值
150°C
晶体管封装类型
SOT-227B
最大集电极发射电压
1.2kV
晶体管安装
面板
MSL
-
相关产品
找到 3 件产品
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下载产品合规证书
产品合规证书
重量(千克):.03