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IXFB132N50P3
功率场效应管, MOSFET, N沟道, 500 V, 132 A, 0.039 ohm, TO-264, 通孔
产品概述
The IXFB132N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today's demanding high-voltage conversion system.
- Dynamic dV/dt rating
- Avalanche rating
- High power dissipation (Pd)
- Low thermal resistance (Rthjc)
- Fast intrinsic rectifier
- Low gate drive power requirements
- Low package inductance
- High power density
- Reduces conduction and switching losses
- Enables high-speed switching
- Promotes use of smaller passive components
- Promotes use of simple economical gate drive solutions
- Cooler device operation
- Enables system miniaturization
- Increased device ruggedness
- Easy to mount
应用
电源管理, 电机驱动与控制, 机器人, 替代能源, 照明
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
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可延期交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY161.02 (CNY181.95) | ( ) |
| 10+ | CNY148.54 (CNY167.85) | ( ) |
| 25+ | CNY141.78 (CNY160.21) | ( ) |
| 100+ | CNY126.75 (CNY143.23) | ( ) |
定价不可用。 请联系客户服务。
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