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数量 | 价钱 (含税) |
---|---|
1+ | CNY186.500 (CNY210.745) |
5+ | CNY169.350 (CNY191.3655) |
10+ | CNY152.200 (CNY171.986) |
50+ | CNY147.090 (CNY166.2117) |
100+ | CNY141.970 (CNY160.4261) |
250+ | CNY141.550 (CNY159.9515) |
产品信息
产品概述
The IXFB132N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6ΩnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today's demanding high-voltage conversion system.
- Dynamic dV/dt rating
- Avalanche rating
- High power dissipation (Pd)
- Low thermal resistance (Rthjc)
- Fast intrinsic rectifier
- Low gate drive power requirements
- Low package inductance
- High power density
- Reduces conduction and switching losses
- Enables high-speed switching
- Promotes use of smaller passive components
- Promotes use of simple economical gate drive solutions
- Cooler device operation
- Enables system miniaturization
- Increased device ruggedness
- Easy to mount
技术规格
N通道
132A
TO-264
10V
1.89kW
150°C
-
Lead (21-Jan-2025)
500V
0.039ohm
通孔
5V
3引脚
-
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:Germany
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书