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IXFH170N10P
功率场效应管, MOSFET, 极性FET, N沟道, 100 V, 170 A, 0.009 ohm, TO-247, 通孔
产品概述
The IXFH170N10P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for switch-mode and resonant-mode power supplies, DC-to-DC converters and laser drivers.
- International standard packages
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
应用
电源管理, 电机驱动与控制, 机器人
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
技术文档 (1)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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您现在可以预订货品了 订购所需的数量并按正常方式结算。目前无法交付的数量将列入延期交货订单中，并在到货后立即发货。
交付周期内有额外库存， 交付周期大约为 22-9-26
120 UK 有库存，可在 4-5 个工作日内交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY99.12 (CNY112.01) | ( ) |
| 10+ | CNY89.56 (CNY101.20) | ( ) |
| 25+ | CNY85.40 (CNY96.50) | ( ) |
| 100+ | CNY74.15 (CNY83.79) | ( ) |
| 500+ | CNY64.57 (CNY72.96) | ( ) |
| 1000+ | CNY56.81 (CNY64.20) | ( ) |
定价不可用。 请联系客户服务。
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