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IXFH60N50P3
功率场效应管, MOSFET, N沟道, 500 V, 60 A, 0.1 ohm, TO-247, 通孔
产品概述
The IXFH60N50P3 is a 500V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Avalanche rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
应用
电源管理, 电机驱动与控制
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
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CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
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可延期交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY76.60 (CNY86.56) | ( ) |
| 10+ | CNY69.22 (CNY78.22) | ( ) |
| 25+ | CNY66.00 (CNY74.58) | ( ) |
| 100+ | CNY57.30 (CNY64.75) | ( ) |
| 500+ | CNY49.91 (CNY56.40) | ( ) |
| 1000+ | CNY43.91 (CNY49.62) | ( ) |
定价不可用。 请联系客户服务。
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