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IXFR140N30P
功率场效应管, MOSFET, N沟道, 300 V, 82 A, 0.026 ohm, ISOPLUS-247, 通孔
产品概述
The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
- Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
- 2500V Electrical isolation voltage
应用
电源管理
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
产品信息
技术文档 (2)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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您现在可以预订货品了 订购所需的数量并按正常方式结算。目前无法交付的数量将列入延期交货订单中，并在到货后立即发货。
将于 22-10-2 再提供 120 件
将于 21-12-8 再提供 3 件
3 UK 有库存，可在 4-5 个工作日内交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY143.22 (CNY161.84) | ( ) |
| 10+ | CNY132.11 (CNY149.28) | ( ) |
| 25+ | CNY126.11 (CNY142.50) | ( ) |
| 100+ | CNY112.73 (CNY127.38) | ( ) |
| 500+ | CNY101.41 (CNY114.59) | ( ) |
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