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数量 | 价钱 (含税) |
---|---|
1+ | CNY36.130 (CNY40.8269) |
10+ | CNY33.660 (CNY38.0358) |
25+ | CNY32.670 (CNY36.9171) |
50+ | CNY31.900 (CNY36.047) |
100+ | CNY31.120 (CNY35.1656) |
250+ | CNY30.130 (CNY34.0469) |
500+ | CNY29.430 (CNY33.2559) |
产品信息
产品概述
MT29F4G16ABBDAH4-IT:D is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).
- 4Gb density, 16-bit device width
- SLC level, 1.8V (1.7 to 1.95V) operating voltage
- Feature set D, Async interface
- Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation completion, pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: write protect entire device
- Industrial operating temperature range from -40°C to +85°C, package style is 63-ball VFBGA
技术规格
SLC NAND
256M x 16位
VFBGA
50MHz
1.7V
1.8V
-40°C
1.7V-1.95V SLC NAND Flash Memories
4Gbit
并行口
63引脚
22ns
1.95V
表面安装
85°C
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书