MT42L64M32D2HE-18 AAT:D

MT42L64M32D2HE-18 AAT:D is a LPDDR2 SDRAM. It is a 1Gb mobile low-power DDR2 SDRAM (LPDDR2) and high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. This memory is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728-bit banks are organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks are organized as 8192 rows by 512 columns by 32 bits. It has multiplexed, double data rate, command/address inputs; commands entered on every CK edge. It has bidirectional/differential data strobe per byte of data (DQS/DQS#), programmable READ and WRITE latencies (RL/WL).

• Operating voltage range is 1.2V
• 63Meg x 32 configuration, automotive certified
• Packaging style is 134-ball FBGA, 10mm x 11.5mm
• Cycle time is 1.875ns, ᵗCK RL = 8, LPDDR2, 2die addressing
• Operating temperature range is –40°C to +105°C, fourth generation
• Clock rate is 533MHz, data rate is 1066Mb/s/pin
• Ultra low-voltage core and I/O power supplies, four-bit prefetch DDR architecture
• Eight internal banks for concurrent operation, per-bank refresh for concurrent operation
• Partial-array self refresh (PASR), deep power-down mode (DPD)
• Selectable output drive strength (DS), clock stop capability