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制造商标准交货时间:64 周
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数量 | 价钱 (含税) |
---|---|
1+ | CNY44.910 (CNY50.7483) |
10+ | CNY41.780 (CNY47.2114) |
25+ | CNY40.520 (CNY45.7876) |
50+ | CNY39.560 (CNY44.7028) |
100+ | CNY38.600 (CNY43.618) |
250+ | CNY37.360 (CNY42.2168) |
500+ | CNY36.380 (CNY41.1094) |
包装规格:每个
最低: 1
多件: 1
CNY44.91 (CNY50.75 含税)
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产品信息
制造商MICRON
制造商产品编号MT46H16M32LFBQ-5 AAT:C
库存编号4050854
技术数据表
DRAM类型Mobile LPDDR
存储密度512Mbit
记忆配置16M x 32位
时钟频率最大值200MHz
IC 外壳 / 封装VFBGA
针脚数90引脚
额定电源电压1.8V
芯片安装表面安装
工作温度最小值-40°C
工作温度最高值105°C
产品范围-
产品概述
MT46H16M32LFBQ-5 AAT:C is a LPDDR SDRAM. It is a 512Mb mobile low-power DDR SDRAM and a high-speed CMOS, dynamic random access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. Each of the x16’s 134,217,728-bit banks are organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks are organized as 8192 rows by 512 columns by 32 bits.
- Operating voltage range is 1.8V, deep power-down (DPD)
- 16Meg x 32 configuration, automotive certified
- Packaging style is 90-ball (8mm x 13mm) VFBGA, “green”
- Timing (cycle time) is 5ns at CL = 3 (200 MHz), JEDEC-standard addressing
- Automotive temperature range is –40˚C to +105˚C, third generation
- Clock rate is 200MHz, bidirectional data strobe per byte of data (DQS)
- Differential clock inputs (CK and CK#), commands entered on each positive CK edge
- DQS edge-aligned with data for READs, centeraligned with data for WRITEs
- Concurrent auto precharge option is supported, auto refresh and self refresh modes
- Temperature-compensated self refresh (TCSR), partial-array self refresh (PASR)
技术规格
DRAM类型
Mobile LPDDR
记忆配置
16M x 32位
IC 外壳 / 封装
VFBGA
额定电源电压
1.8V
工作温度最小值
-40°C
产品范围
-
存储密度
512Mbit
时钟频率最大值
200MHz
针脚数
90引脚
芯片安装
表面安装
工作温度最高值
105°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001