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数量 | 价钱 (含税) |
---|---|
1+ | CNY44.250 (CNY50.0025) |
10+ | CNY41.210 (CNY46.5673) |
25+ | CNY39.970 (CNY45.1661) |
50+ | CNY39.020 (CNY44.0926) |
100+ | CNY38.090 (CNY43.0417) |
250+ | CNY36.860 (CNY41.6518) |
500+ | CNY35.940 (CNY40.6122) |
产品信息
产品概述
MT46V32M16P-5B IT:J is a double data rate (DDR) SDRAM. The DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. The DDR SDRAM provide for programmable READ or WRITE burst lengths of 2, 4, or 8 locations. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
- Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#), commands entered on each positive CK edge
- DQS edge-aligned with data for READs; centre aligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK, four internal banks for concurrent operation
- Auto refresh – 64ms, 8192-cycle
- Longer-lead TSOP for improved reliability (OCPL)
- 2.5V I/O (SSTL-2 compatible), concurrent auto precharge option is supported
- 32 Meg x 16 configuration, timing – cycle time: 5ns at CL = 3 (DDR400)
- 400-mil TSOP package
- Industrial temperature range from -40°C to 85°C
警告
该产品的市场需求较大, 导致交货时间延长。交货日期可能会有延迟。该产品不在折扣范围内。
技术规格
DDR
32M x 16位
TSOP
2.6V
-40°C
-
512Mbit
200MHz
66引脚
表面安装
85°C
No SVHC (17-Dec-2015)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书