打印页面
无法检索可用信息
产品信息
制造商MICRON
制造商产品编号MT47H128M16RT-25E:C
库存编号4050862
技术数据表
DRAM类型DDR2
存储密度2Gbit
记忆配置128M x 16位
时钟频率最大值400MHz
IC 外壳 / 封装FBGA
针脚数84引脚
额定电源电压1.8V
芯片安装表面安装
工作温度最小值0°C
工作温度最高值85°C
产品范围-
产品概述
MT47H128M16RT-25E:C is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
- Operating voltage range is –1.0V to 2.3V(VDD)
- 128Meg x 16 configuration, 8 internal banks for concurrent operation
- Packaging style is 84-ball 9.0mm x 12.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Operating temperature range is 0°C to +85°C
- Data rate is 800MT/s, differential data strobe (DQS, DQS#) option
- DLL to align DQ and DQS transitions with CK, duplicate output strobe (RDQS) option for x8
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- On-die termination (ODT), supports JEDEC clock jitter specification
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), 8D response time
技术规格
DRAM类型
DDR2
记忆配置
128M x 16位
IC 外壳 / 封装
FBGA
额定电源电压
1.8V
工作温度最小值
0°C
产品范围
-
存储密度
2Gbit
时钟频率最大值
400MHz
针脚数
84引脚
芯片安装
表面安装
工作温度最高值
85°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
下载产品合规证书
产品合规证书
重量(千克):.000001