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数量 | 价钱 (含税) |
---|---|
1+ | CNY31.120 (CNY35.1656) |
10+ | CNY29.010 (CNY32.7813) |
25+ | CNY27.520 (CNY31.0976) |
50+ | CNY27.170 (CNY30.7021) |
100+ | CNY26.820 (CNY30.3066) |
250+ | CNY25.970 (CNY29.3461) |
500+ | CNY25.340 (CNY28.6342) |
产品概述
MT47H128M8SH-25E IT:M is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#).
- 128M8 configuration, tCK = 2.5ns, CL = 5 cycle time
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS, DQS#) option
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- Selectable burst lengths (BL): 4 or 8, adjustable data-output drive strength
- DLL to align DQ and DQS transitions with CK, 8 internal banks for concurrent operation
- Industrial temperature range from -40°C to +85°C
- Package style is 60-ball FBGA
技术规格
DDR2
128M x 8位
TFBGA
1.8V
-40°C
-
1Gbit
400MHz
60引脚
表面安装
95°C
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书