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383 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY141.590 (CNY159.9967) |
10+ | CNY123.890 (CNY139.9957) |
25+ | CNY102.650 (CNY115.9945) |
50+ | CNY92.030 (CNY103.9939) |
100+ | CNY86.160 (CNY97.3608) |
包装规格:每个
最低: 1
多件: 1
CNY141.59 (CNY160.00 含税)
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产品信息
制造商MICRON
制造商产品编号MT47H256M8EB-25E:C
库存编号4050863
技术数据表
DRAM类型DDR2
存储密度2Gbit
记忆配置256M x 8位
时钟频率最大值400MHz
IC 外壳 / 封装FBGA
针脚数60引脚
额定电源电压1.8V
芯片安装表面安装
工作温度最小值0°C
工作温度最高值85°C
产品范围-
产品概述
MT47H256M8EB-25E:C is a DDR2 SDRAM. It uses a uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. It has JEDEC-standard of 1.8V I/O (SSTL_18-compatible) with differential data strobe (DQS, DQS#) option.
- Operating voltage range is –1.0V to 2.3V(VDD)
- 256Meg x 8 configuration, duplicate output strobe (RDQS) option for x8
- Packaging style is 60-ball 9.0mm x 11.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Operating temperature range is 0°C to +85°C
- Data rate is 800MT/s, differential data strobe (DQS, DQS#) option
- DLL to align DQ and DQS transitions with CK, 8 internal banks for concurrent operation
- Programmable CAS latency (CL), WRITE latency = READ latency is 1ᵗCK
- Adjustable data-output drive strength, on-die termination (ODT)
- Supports JEDEC clock jitter specification
技术规格
DRAM类型
DDR2
记忆配置
256M x 8位
IC 外壳 / 封装
FBGA
额定电源电压
1.8V
工作温度最小值
0°C
产品范围
-
存储密度
2Gbit
时钟频率最大值
400MHz
针脚数
60引脚
芯片安装
表面安装
工作温度最高值
85°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001