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数量 | 价钱 (含税) |
---|---|
1+ | CNY29.420 (CNY33.2446) |
10+ | CNY27.440 (CNY31.0072) |
25+ | CNY26.050 (CNY29.4365) |
50+ | CNY26.010 (CNY29.3913) |
100+ | CNY25.180 (CNY28.4534) |
250+ | CNY24.580 (CNY27.7754) |
500+ | CNY23.960 (CNY27.0748) |
1000+ | CNY23.030 (CNY26.0239) |
产品概述
MT47H64M8SH-25E:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
- 64M8 configuration, tCK = 2.5ns, CL = 5 cycle time
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture, duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK, 4 internal banks for concurrent operation
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- Adjustable data-output drive strength, on-die termination (ODT)
- Package style is 60-ball FBGA
技术规格
DDR2
64M x 8位
TFBGA
1.8V
0°C
-
512Mbit
400MHz
60引脚
表面安装
85°C
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书