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461 有货
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60 件可于 3-4 个工作日内送达(新加坡 库存)
401 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY69.150 (CNY78.1395) |
10+ | CNY64.290 (CNY72.6477) |
25+ | CNY61.320 (CNY69.2916) |
50+ | CNY59.770 (CNY67.5401) |
100+ | CNY57.370 (CNY64.8281) |
250+ | CNY56.010 (CNY63.2913) |
包装规格:每个
最低: 1
多件: 1
CNY69.15 (CNY78.14 含税)
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产品概述
MT53D512M16D1DS-046 WT:D is a mobile LPDDR4 SDRAM. The mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 1,073,741,824bit banks are organized as 65,536 rows by 1024 columns by 16 bits. LPDDR4 uses a double-data-rate (DDR) protocol on the DQ bus to achieve high-speed operation. The DDR interface transfers two data bits to each DQ lane in one clock cycle and is matched to a 16n-prefetch DRAM architecture.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
- 2133MHz clock rate, 4266Mb/s/pin data rate
- 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ ordering voltage
- 512 Meg x 32 configuration
- 200-ball WFBGA package, -25°C to +85°C operating temperature
技术规格
DRAM类型
Mobile LPDDR4
记忆配置
512M x 16位
IC 外壳 / 封装
WFBGA
额定电源电压
1.1V
工作温度最小值
-25°C
产品范围
-
存储密度
8Gbit
时钟频率最大值
2.133GHz
针脚数
200引脚
芯片安装
表面安装
工作温度最高值
85°C
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.00001