MPQ5850GJ-P

MPQ5850 is a smart diode controller with reverse protection that can drive an external N-channel MOSFET to replace a schottky diode for reverse input protection. The device’s 20mV ultra-low dropout minimizes power loss and enables a low minimum input voltage, which makes the MPQ5850 well-suited for cold-crank conditions in automotive applications. The 4μA shutdown current also makes the device ideal for battery-powered applications. The ultra-fast transient response meets stringent ISO16750 requirements. The MPQ5850 integrates an internal boost to provide a boost voltage that turns on the external N-channel MOSFET, even at a low input voltage (VIN). In an open drain, the power-good signal indicates when the external N-channel MOSFET is fully on. Application includes battery-powered systems.

• Blocking voltage is -36V, load dump up to 42V, cold crank down to 0V
• Rectifies AC frequency up to 100KHz
• Strong gate drive ability 170mA pullup and 430mA pull-down
• Extended vehicle battery life, low quiescent current in standby mode (4μA)
• Low quiescent current in steady state (30μA)
• 20mV ultra-low dropout
• Integrates a boost converter
• Power good (PG) indication for RES out of regulation, fast pull-up, and part disabling
• Reduced board size, TSOT23-8 (2mmx3mm) package
• Operating junction temperature range from -40°C to +150°C

注释

MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.